Close
浙大通行证登录

性别:
职称:
单位:
行政职务:学历:
毕业院校:毕业时间:
MSN:QQ:
手机号码:办公电话:
Email:
通信地址:
邮编:

Last Activity

Id VisitTime IPAddress Area
23584673 2018-05-23 54.167.216.239 美国
23584651 2018-05-23 54.167.216.239 美国
23566494 2018-05-23 54.80.82.9 美国
23521928 2018-05-22 106.11.153.44 亚太地区
23521417 2018-05-22 106.11.153.44 亚太地区
23519123 2018-05-22 106.11.157.53 亚太地区
23499508 2018-05-21 106.11.157.53 亚太地区
23493941 2018-05-21 45.56.155.51 美国
23490661 2018-05-21 45.56.155.51 美国
23469306 2018-05-21 207.46.13.28 美国
23457613 2018-05-20 106.11.153.44 亚太地区
23449913 2018-05-20 10.107.130.111 局域网
23441919 2018-05-20 42.236.49.93 中国
23374002 2018-05-18 213.180.203.26 俄罗斯
23353067 2018-05-18 203.208.60.174 北京市

Publication

 

International Journal


[1]    D. W. Wang, W. S. Zhao, H. Xie, J. Hu, L. Zhou, W. Chen, P. Gao, J. Ye, Y. Xu, H. S. Chen, E. P. Li, and W. Y. Yin*, “Tunable THz multiband frequency-selective surface based on hybrid metal-graphene structures,” IEEE Transactions on Nanotechnology, vol. 16, no. 6, pp. 1132-1137, 2017.

 

[2]    S. Li, W. Chen, Y. Luo, J. Hu, P. Gao, J. Ye, K. Kang, H. S. Chen, E. P. Li, and W. Y. Yin*, “Fully-coupled multiphysics simulation of bi-polar resistive random access memory,” IEEE Transactions on Electron Devices, vol. 64, no. 9, pp. 3647-3653, 2017.

 

[3]    P. Zhang, W. Chen, J. Hu, and W. Y. Yin*, “Electrothermal effects on hot carrier injection in n-type SOI FinFET under circuit speed bias,” IEEE Transactions on Electron Devices, vol. 64, no. 9, pp. 3802-3807, 2017.

 

[4]    X. Liang, R. Hao*, Z. Ye, P. Qin, W. Chen, H. Chen, X. Jin, D. Yang, and E. Li*, “Highly efficient graphene-on-gap modulator by employing the hybrid plasmonic effect,” Optics Letters, vol. 42, no. 9, pp. 1736-1739, 2017.

 

[5]    Z. Yang, P. Gao*, J. He, W. Chen, W. Y. Yin, Y. Zeng, W. Guo, J. Ye*, and Y. Cui*, “Tuning of the contact properties for high-efficiency Si/PEDOT: PSS heterojunction solar cells,” ACS Energy Letters, vol. 2, no.3 pp. 556-562, 2017.

 

[6]    X. L Peng, R. Hao*, W. Chen, H. Chen, W. Y. Yin, and E. P. Li*, “An active absorber based on non-volatile floating-gate graphene structure,” IEEE Transactions on Nanotechnology, vol. 16, no. 2, pp. 189-195, 2017.

 

[7]    Y. Luo, W. Chen*, M. Cheng, and W. Y. Yin*, “Electrothermal characterization in 3-D resistive random access memory (RRAM) arrays,” IEEE Transactions on Electron Devices, vol. 63, no. 12, pp. 4720-4728, 2016.

 

[8]    W. Chen, R. Cheng, D.W. Wang, H. Song, X. Wang, H. Chen, E. Li, W. Y. Yin, and Y. Zhao*, “Electrothermal effects on hot-carrier reliability in SOI MOSFETs – AC vs circuit-speed random stress,” IEEE Transactions on Electron Devices, vol. 63, no.9, pp. 3669-3676, 2016.

 

[9]    W. Chen, W. Y. Yin*, W. S. Zhao, R. Hao, E. Li, K. Kang, and J. Guo, “Scaling analysis of high gain monolayer MoS2 photodetector for its performance optimization,” IEEE Transactions on Electron Devices, vol. 63, no. 4, pp. 1608-1614, 2016.

 

[10] N. Li, J. Mao*, W. S Zhao, M. Tang, W. Chen and W. Y. Yin*, “Electrothermal co-simulation of 3-D carbon-based heterogeneous interconnects,” IEEE Transactions on Components, Packaging and Manufacturing Technology, vol. 6, no. 4, pp. 518-526, 2016.

 

[11] W. Chen, W. Y. Yin*, E. Li, M. Cheng, and J. Guo, “Electrothermal investigation on vertically aligned single-walled carbon nanotube contacted phase change memory array for 3-D ICs,” IEEE Transactions on Electron Devices, vol. 62, no. 10, pp. 3258-3263, 2015.

 

[12] W. Chen*, X. Li, W. Y. Yin, S. Lin, Z. Zhao, E. Li, and H. Zhou, “Modeling and simulation of graphene gated graphene-GaAs Schottky junction field effect solar cell for its performance enhancement,” IEEE Transactions on Electron Devices, vol. 62, no. 11, pp. 3760-3766, 2015.

 

[13] X. Li, W. Chen, S. Zhang, Z. Wu, P. Wang, Z. Xu, H. Chen, W. Yin, H. Zhong, and S. Lin*, “18.5% efficient graphene/GaAs van der Waals heterostructure solar cell,” Nano Energy, vol. 16, pp. 310-319, 2015.

 

[14] D. Wang, W. Zhao, X. Gu, W. Chen and W. Y. Yin*, “Wideband modeling of graphene-based structures at different temperature using hybrid FDTD,” IEEE Transactions on Nanotechnology, vol. 14, no. 2, pp. 250-258, 2015.

 

[15] C. Lee, G. H. Lee, A. Zande, W. Chen, Y. Li, M. Han, X. Cui, G. Arefe, C. Nuckolls, T. F. Heinz, J. Guo, J. Hone, and P. Kim*, “Atomically thin p-n junctions with Van Der Waals heterointerfaces,” Nature Nanotechnology, vol. 9, no. 9, pp. 676-681, 2014.

 

[16] H. Yu, J. H. Kim, W. Chen, D. Kim, D. Song, J. Guo and F. So*, “Effect of nano-porosity on high gain permeable metal-base transistors,” Advanced Functional Materials, vol. 24, no. 38, pp. 6056-6065, 2014.

 

[17] W. Chen, F. So and J. Guo*, “Intrinsic delay of permeable base transistor,” Journal of Applied Physics vol. 116, no. 4, p. 044505, 2014.

 

[18] W. Chen, A. G. Rinzler and J. Guo*, “Modeling and simulation of carbon nanotube-semiconductor heterojunction vertical field effect transistors,” Journal of Applied Physics, vol. 113, no. 23, p. 234501, 2013.

 

[19] W. Chen, A. G. Rinzler and J. Guo*, “Computational study of graphene-based vertical field effect transistor,” Journal of Applied Physics, vol. 113, no. 9, p. 094507, 2013.

 

[20] W. Chen, G. Seol, A. G. Rinzler, and J. Guo*, “Carrier dynamics and design optimization of electrolyte-induced inversion layer carbon nanotube-silicon Schottky junction solar cell,” Applied Physics Letters, vol.100, no. 10, p. 103503, 2012.

 

[21] W. Chen and J. Guo*, “Performance analysis of carbon nanotube contacted phase change memory by finite element method,” Journal of Applied Physics, vol. 100, no. 8, p. 084315, 2011.

 

[22] S. J. Pearton*, C. Y. Chang, B. H. Chu, C. F. Lo, F. Ren, W. Chen and J. Guo, “ZnO, GaN and InN Functionalized Nanowires For Sensing and Photonics Applications,” IEEE Journal of Selected Topics in Quantum Electronics, vol. 17, no. 4, pp. 1092-1101, 2011.

 

[23] W. Chen, W. Y. Yin*, L. Jia and Q. H. Liu*, “Electrothermal characterization of single-walled carbon nanotube (SWCNT) interconnect arrays,” IEEE Transactions on Nanotechnology, vol.8, no. 6, pp. 718-728, 2009.


Book Chapter

[1]    W. Y. Yin, W. S. Zhao, and W. Chen, one chapter “Electrothermal Modeling of Carbon Nanotube-Based TSVs of “Carbon nanotubes for interconnects: process, design and applications,” Springer, 2017.