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黄科杰

性别:男
职称:
单位:信息与电子工程学学院
行政职务: 毕业院校:新加坡国立大学 通信地址:浙江大学玉泉校区老生仪楼304 通信地址邮编:310027 办公电话:0571 87951754 电子信箱:huangkejie@zju.edu.cn

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专利成果

Granted Patents


  1. Foong Huey Chian, Huang Kejie. "Write control circuits and write control methods". US Patent. US9,257,177, 2016.
  2. Huang Kejie. "A circuit arrangement and a method of writing states to a memory cell". US Patent, US8942024, 2015.
  3. Lua Yan Hwee Sunny, Huang Kejie. "Writing circuit for a magnetoresistive memory cell, memory cell arrangement and method of writing into a magnetoresistive memory cell of a memory cell arrangement". US Patent. US8,773,897, 2014.
  4. Huang Kejie, Ning Ning. "Reading Circuit for A Resistive Memory Cell". US Patent. US8,867,260, 2014. SG Patent Application, SG/201303132-3, 13/03/2013.

Patent Application


  1. Huang Kejie, Foong Huey Chian. "Latch Circuit and Data Processing System". US Patent Application. US/14/092,975, 11/28/2013.
  2. Huang Kejie, Sunny Lua Yan Hwee, Arthur Ang. "A Current Writing Circuit For A Resistive Memory Cell Arrangement". US/SG Patent Application. US20120300531, 2012. SG/201203494-8, 23/05/2012.
  3. Huang Kejie, Zhao Rong. "Writing Circuit for A Resistive Memory Cell Arrangement and A Memory Cell Arrangement". US/SG Patent Application. US20130077383, 2013. SG/201106907-7, 9/23/2011.

Provisional


  1. Huang Kejie, Tan Theng Kiat. "An Optimised Scheme to Minimise Resistance Drift for Multi-Level Phase Change Memory Array". US/61/731,005, 11/29/2012.
  2. Huang Kejie. "A New Reference Cell Circuit for current writing STT-MRAM to Reduce the Cell Resistance Distribution". US/61/567,163, 06/12/2011.
  3. Huang Kejie, Lua Yan Hwee Sunny. "A Compact Read-Write Circuit for Bi-Directional Current Writing STT-MRAM". US/61/568,688, 09/12/2011.