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金潮渊

性别:男
职称:百人计划研究员(自然科学B类)
单位:信息与电子工程学学院
籍贯:杭州市 学位:工学博士 毕业院校:英国谢菲尔德大学 通信地址:浙江省杭州市西湖区浙大路38号-浙江大学玉泉校区行政楼226 通信地址邮编:310027 办公电话:0571-87952099 电子信箱:jincy@zju.edu.cn

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超快光子学实验室
——探索信息处理的极限——
DEC 12
发表论文

学术期刊:

1)    K. Che, D. Tang, H. Xu, C. Ren, L. Chen, C.Y. Jin, and Z. Cai, “Thermally tuned Brillouin lasing in packaged whispering gallery resonator,” IEEE J. Lightwave Technol., accepted.

2)    M. Liao, S. Chen, S. Huo, S. Chen, J. Wu, M. Tang, K. Kennedy, W. Li, M. Martin, T. Baron, C.Y. Jin, I. Ross, A. Seeds, and H. Liu, “Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon,” IEEE J. Sel. Top. Quant. Electron., 23, 1900910 (2017).

3)    Z. Ren, Q. Kan, G. Ran, C.Y. Jin, L. Yuan, X. Wang, L. Tao, H. Yu, L. Zhang, W. Chen, K. He, R.-M. Ma, J. Pan, and W. Wang, “Hybrid single-mode laser based on graphene Bragg gratings on silicon,” Opt. Lett. 42, 2134 (2017).

4)    Z. Ren, X. Wang, K. He, C.Y. Jin, and Q. Kan, “A parity-time symmetry single-mode laser based on graphene,” J. Mod. Opt. 64, 2133 (2017).

5)    R. Johne, R. Schutjens, S. Fattahpoor, C.-Y. Jin, and A. Fiore, “Publisher's Note: Control of the electromagnetic environment of a quantum emitter by shaping the vacuum field in a coupled-cavity system,” Phys. Rev. A 94, 029902 (2016)

6)    R. Johne, R. Schutjens, S. Fattahpoor, C.-Y. Jin, and A. Fiore, “Control of the electromagnetic environment of a quantum emitter by shaping the vacuum field in a coupled-cavity system,” Phys. Rev. A91, 063807 (2015).

7)    C.Y. Jin, R. Johne, M.Y. Swinkels, T.B. Hoang, L. Midolo, P.J. van Veldhoven, and A. Fiore, “Ultrafast nonlocal control of spontaneous emission,” Nature Nanotechnology, vol. 9, pp. 886-890, 2014.

8)    C.Y. Jin, O. Wada, “Photonic switching devices based on semiconductor nanostructures,” J. Phys. D. Vol. 47, pp. 133001(1-17), 2014. (Invited Topical Review)

9)    J. Yuan, C.Y. Jin, M. Skacel, A. Urbańczyk, T. Xia, P.J. van Veldhoven, and R. Nötzel, “Coupling of InAs quantum dots to the plasmon resonance of In nanoparticles by metal-organic vapour phase epitaxy,” Appl. Phys. Lett. vol. 102, pp. 191111(1-4), 2013. (as the correspondence author)

10)    C.Y. Jin, M.Y. Swinkels, R. Johne, T.B. Hoang, L. Midolo, P.J. van Veldhoven, and A. Fiore, “All-optical control of the spontaneous emission of quantum dots using coupled-cavity quantum electrodynamics,” Preprint at: http://arxiv.org/abs/1207.5311, 2012.

11)    J. Yuan, H. Wang, P.J. van Veldhoven, J. Wang, T. de Vries, B. Smalbrugge, C.Y. Jin, P. Nouwens, E.J. Geluk, A.Yu. Silov, R. Nötzel, “Controlling polarization anisotropy of site-controlled InAs/InP (100) quantum dots,” Appl. Phys. Lett. vol. 98, pp. 201904(1-3), 2011.

12)    C.Y. Jin, O. Kojima, T. Kita, O. Wada, and M. Hopkinson, “Observation of phase shifts in vertical cavity quantum dot switches,” Appl. Phys. Lett. vol. 98, pp. 231101(1-3), 2011.

13)    C.Y. Jin, S. Ohta, M. Hopkinson, O. Kojima, T. Kita, O. Wada, “Temperature-dependent carrier tunnelling for self-assembled InAs/GaAs quantum dots with a GaAsN quantum well injector,” Appl. Phys. Lett. vol. 96, pp.151104(1-3), 2010.

14)    C.Y. Jin, O. Kojima, T. Inoue, T. Kita, O. Wada, M. Hopkinson, and K. Akahane, “Detailed design and characterization of all-optical switches based on InAs/GaAs quantum dots in a vertical cavity,” IEEE J. Quantum Electron. vol. 46, pp. 1582-1589, 2010.

15)    C.Y. Jin, O. Kojima, T. Kita, O. Wada, M. Hopkinson, and K. Akahane, “Vertical-geometry all-optical switches based on InAs/GaAs quantum dots in a cavity,” Appl. Phys. Lett. vol. 95, pp. 021109(1-3), 2009.

16)    C.Y. Jin, H.Y. Liu, Q. Jiang, M. Hopkinson, and O. Wada, “Simple theoretical model for the temperature stability of InAs/GaAs self-assembled quantum dot lasers with different p-type modulation doping levels,” Appl. Phys. Lett. vol. 93, pp. 161103(1-3), 2008.

17)    C.Y. Jin, H.Y. Liu, S.Y. Zhang, and M. Hopkinson, "Low-threshold 1.3 μm GaInNAs quantum well lasers using quaternary barriers," IEEE Photon. Technol. Lett. vol. 20, pp. 942-944, 2008.

18)    H.Y. Liu, Y. Qiu, C.Y. Jin, T. Walther, and A.G. Cullis, “1.55 μm InAs quantum dots grown on a GaAs substrate using a GaAsSb metamorphic buffer layer,” Appl. Phys. Lett. vol. 92, pp. 111906(1-3), 2008.

19)    Y. Qiu, T. Walther, H.Y. Liu, C.Y. Jin, M. Hopkinson, and A.G. Cullis, “Comparing InGaAs and GaAsSb metamorphic buffer layers on GaAs substrates for InAs quantum dots emitting at 1.55 μm,” Microscopy Semi. Mat. vol. 120, pp. 263-268, 2007.

20)    Z.Y. Zhang, I.J. Luxmoore, C.Y. Jin, H.Y. Liu, Q. Jiang, K.M. Groom, D.T. Childs, M. Hopkinson, A.G. Cullis, and R.A. Hogg, “Effect of facet angle on effective facet reflectivity and operating characteristics of quantum dot edge emitting lasers and superluminescent light-emitting diodes,” Appl. Phys. Lett. vol. 91, pp. 081112(1-3), 2007.

21)    C.Y. Jin, H.Y. Liu, K.M. Groom, Q. Jiang, M. Hopkinson, T.J. Badcock, R.J. Royce, and D.J. Mowbray, “Effects of photon and thermal coupling mechanisms on the characteristics of self-assembled InAs/GaAs quantum dot lasers,” Phys. Rev. B vol. 76, pp. 085315(1-12), 2007.

22)    C.Y. Jin, H.Y. Liu, S.Y. Zhang, Q. Jiang, S.L. Liew, M. Hopkinson, T.J. Badcock, E. Nabavi, and D.J. Mowbray, “Optical transitions in type-II InAs/GaAs quantum dots covered by a GaAsSb strain-reducing layer,” Appl. Phys. Lett. vol. 91, pp. 021102(1-3), 2007.

23)    H.Y. Liu, T.J. Badcock, C.Y. Jin, E. Nabavi, K.M. Groom, M. Hopkinson, and D.J. Mowbray, “Reduced temperature sensitivity of the lasing wavelength in near-1.3-μm InAs/GaAs quantum-dot laser with a stepped composition strain-reducing layer,” Electron. Lett. vol. 43, pp. 670-672, 2007.

24)    C.Y. Jin, T.J. Badcock, H.Y. Liu, K.M. Groom, R.J. Royce, D.J. Mowbray, and M. Hopkinson, “Observation and modeling of a room-temperature negative characteristic temperature 1.3 μm p-type modulation doped quantum dot laser,” IEEE J. Quantum Electron. vol. 42, pp. 1259-1265, 2006.

25)    T.J. Badcock, H.Y. Liu, K.M. Groom, C.Y. Jin, M. Gutiérrez, M. Hopkinson, D.J. Mowbray, and M.S. Skolnick, “1.3 µm InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature,” Electron. Lett. vol. 42, pp. 922-923, 2006.

26)    C.Y. Jin, H.Y. Liu, T.J. Badcock, K.M. Groom, M. Gutiérrez, R. Royce, M. Hopkinson, and D.J. Mowbray, “High-performance 1.3μm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature,” IEE Proc. Optoelectronics vol. 153, pp. 280-283, 2006.

27)    M. Hopkinson, C.Y. Jin, H.Y. Liu, P. Navaretti, and R. Airey, “1.34 μm GaInNAs quantum well lasers with low room-temperature threshold current density”, Electron. Lett. vol. 42, pp. 923-924, 2006.

28)    H.Y. Liu, C.M. Tey, C.Y. Jin, S.L. Liew, P. Navaretti, M. Hopkinson, and A.G. Cullis, “Effects of growth temperature on the structural and optical properties of 1.6 µm GaInNAs/GaAs multiple quantum wells,” Appl. Phys. Lett. vol. 88, pp. 191907-191909, 2006.

29)    H.Y. Liu, S.L. Liew, T. Badcock, D.J. Mowbray, M.S. Skolnick, S.K. Ray, T.L. Choi, K.M. Groom, B. Stevens, F. Hasbullah, C.Y. Jin, M. Hopkinson, and R.A. Hogg, “p-doped 1.3 µm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency,” Appl. Phys. Lett. vol. 89, pp. 073113-073115, 2006.

30)    C.Y. Jin, Y.Z. Huang, L.J. Yu, and S.L. Deng, “Numerical and theoretical analysis of the crosstalk in linear optical amplifiers,” IEEE J. Quantum Electron. vol. 41, pp. 636-641, 2005.

31)    S.L. Deng, Y.Z. Huang, C.Y Jin, L.J Yu, “Theoretical analysis of gain and threshold current density for long wavelength GaAs-based quantum dots lasers,” J. Semiconductors (China) vol. 26, pp. 1898-1904, 2005.

32)    C. Liu, C.Y. Jin, Y.Z. Huang, N.H. Zhu, ”Numerical analysis of probe light energy in cross-gain modulation of SOA,” J. Semiconductors (China) vol. 26, pp. 812-815, 2005.

33)    C.Y. Jin, Y.Z. Huang, L.J. Yu, and S.L. Deng, “Detailed model and investigation of gain saturation and carrier spatial hole burning for semiconductor optical amplifier with gain clamping by a vertical laser field,” IEEE J. Quantum Electron. vol. 40, pp. 513-518, 2004.

34)    C.Y. Jin and Y.Z. Huang, “Wavelength conversion using gain-clamped semiconductor optical amplifier,” Semiconductor Optoelectronics (China) vol. 25, pp. 29-31, 2004.

35)    C.Y. Jin, W.H. Guo, Y.Z. Huang, and L.J. Yu, “Photon iterative numerical technique for steady-state simulation of gain-clamped semiconductor optical amplifiers,” IEE Proc. Optoelectronics vol. 150, pp. 503-507, 2003.

36)    L.J. Yu, C.Y. Jin, X.L. Lu, and Y.Z. Huang, “Growth of 1.55 µm polarization-insensitive semiconductor optical amplifier,” Semiconductor Optoelectronics (China) vol. 24, pp. 274-275, 2003.


专著章节:
1)    C.Y. Jin, M. Hopkinson, O. Kojima, T. Kita, K. Akahane, and O. Wada “Quantum dot switches: towards nanoscale power-efficient all-optical signal processing,” Chapter in Quantum Dot Devices, Eds. Zhiming M. Wang, in series: Lecture Notes in Nanoscale Science and Technology, Springer, 2012.

毕业论文:
1)    C.Y. Jin, “GaAs-based long-wavelength semiconductor diode lasers for optical fibre communication,” Ph.D. thesis in Electronics and Electrical Engineering, Sheffield University, UK, 2008. (Supervised by Prof. M. Hopkinson and Prof. J. P. R. David)

2)    C.Y. Jin, “InGaAsP/InP quantum-well semiconductor optical amplifiers,” M.S. thesis in Microelectronics and Solid-State Electronics, Chinese Academy of Sciences, China, 2003. (Supervised by Prof. Y. Z. Huang)

学术报道:
1)    A. Fiore, F. M. Pagliano, M.Y. Swinkels, C.Y. Jin, and R. Johne, “Vormgeven aan licht,” Nederlands Tijdschrift voor Natuurkunde vol.81, pp. 290, 2016.

2)    C.Y. Jin, R. Johne, M.Y. Swinkels, R. Schutjens, T.B. Hoang, L. Midolo, P.J. van Veldhoven, and A. Fiore, “Controlling spontaneous emission by real-time shaping the vacuum field in nano-photonic structures,” SPIE Newsroom, no. 5792, 2015.

3)    C.Y. Jin, R. Johne, M.Y. Swinkels, T.B. Hoang, L. Midolo, P.J. van Veldhoven, and A. Fiore, “Controlling spontaneous emission beyond the radiative lifetime,” Optics & Photonics News, vol. 25, pp. 44, 2014.

4)    M. Maragkou, “Spontaneous emission: real-time control,” Nature Photonics, vol. 8, pp. 880, 2014.

5)    M. Vianen, “Ultrafast remote switching of light emission,” Optik & Photonik, vol. 9, pp. 16, 2014.    

6)    M. Marquit, “Vertical cavity quantum switch could lead us away from electronics-based computing,” Phys.org, 2011.

会议期刊:
1)    C.Y. Jin, O. Kojima, T. Inoue, S. Ohta, T. Kita, O. Wada, M. Hopkinson, and K. Akahane, “All-optical switch using InAs quantum dots in a vertical cavity,” Conference Proceeding of the 22nd International Conference on Indium Phosphide and Related Materials, pp. 249-252, 2010.

2)    C.Y. Jin, O. Kojima, T. Inoue, T. Kita, O. Wada, M. Hopkinson, and K. Akahane, “Self-assembled InAs quantum dots within a vertical cavity structure for all-optical switching devices,” Proceedings of SPIE, vol. 7610, p. 76100Q, 2010.

3)    H.Y. Liu, T.J. Badcock, K.M. Groom, M. Hopkinson, M. Gutierrez, D.T. Childs, C.Y. Jin, R.A. Hogg, I.R. Sellers, D.J. Mowbray, M.S. Skolnick, R. Beanland, and D.J. Robbins, “High-performance 1.3-μm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature,” Proceedings of SPIE, vol. 6184, p. 18417, 2006.

4)    P. Navaretti, C.Y. Jin, H.Y. Liu, R. Airey, and M. Hopkinson, “Dilute nitride-based 1.3-μm high performance lasers,” Proceedings of SPIE, vol. 6184, p. D1840, 2006.

会议报告:
1)    C.Y. Jin, “Controlling cavity field for ultrafast photonic devices.” Semiconductor and Integrated Optoelectronics Conference (SIOE), Cardiff, UK, 2016.

2)    C.Y. Jin, “Controlling cavity field for ultrafast photonic devices.” EMN Ultrafast Meeting, Las Vegas, USA, 2015.(Invited)

3)    A. Fiore, C.Y. Jin, R. Johne, R. Schutjens, M. Swinkels, T.B. Hoang, L. Midolo, P.J. van Veldhoven “Control of spontaneous emission by shaping the vacuum field in nanophotonic structures.” Photonics West 2015, San Francisco, USA, 2015. (Invited)

4)    C.Y. Jin, “Dynamic control of semiconductor cavity-QED beyond the radiative lifetime.” International Symposium on Recent Progress of Photonic Devices and Materials, Kobe, Japan, 2014. (Invited)

5)    C.Y. Jin, R. Johne, M.Y. Swinkels, T.B. Hoang, L. Midolo, P.J. van Veldhoven, and A. Fiore, “Ultrafast nonlocal control of spontaneous emission.” NanoCity, Utrecht, the Netherlands, 2014.

6)    C.Y. Jin, R. Johne, M.Y. Swinkels, T.B. Hoang, L. Midolo, P.J. van Veldhoven, and A. Fiore, “Ultrafast nonlocal control of spontaneous emission in photonic crystals.” Photonics West 2014, San Francisco, USA, 2014.

7)    O. Wada, and C.Y. Jin, “Ultrafast, energy-efficient photonic switches based on semiconductor nanostructures.” Asia Communications and Photonics Conference (ACP), Beijing, China, 2013. (Invited)

8)    C.Y. Jin, “Ultrafast control of spontaneous emission in photonic crystals.” Workshop on Micro- and Nano-Scale Quantum Optics, Eindhoven, the Netherlands, 2013. (Invited)

9)    C.Y. Jin, M.Y. Swinkels, R. Johne, T.B. Hoang, L. Midolo, P.J. van Veldhoven, and A. Fiore, “Remote control of spontaneous emission using coupled cavity quantum electrodynamics.” Photonics West 2013, San Francisco, USA, 2013.

10)    C.Y. Jin, M.Y. Swinkels, R. Johne, T.B. Hoang, L. Midolo, P.J. van Veldhoven, and A. Fiore, “Remote all-optical modulation of the spontaneous emission based on coupled cavity quantum electrodynamics.” Physics@FOM, Veldhoven, the Netherlands, 2013. (Invited)

11)    C.Y. Jin, M.Y. Swinkels, R. Johne, T.B. Hoang, L. Midolo, P.J. van Veldhoven, and A. Fiore, “All-optical control of spontaneous emission using coupled-cavity quantum electrodynamics,” The 31st International Conference on the Physics of Semiconductors (ICPS), Zurich, Switzerland, 2012.

12)    O. Wada, C.Y. Jin, O. Kojima, M. Hopkinson, R.F. Oulton, S. Gennaro, K. Akahane, T. Kita, and R.A. Hogg, “Ultrafast Photonic Mach-Zehnder Switch Using Quantum Dot Vertical Cavity Structures,” UK Semiconductors 2012, Sheffield, UK, 2012. (Invited)

13)    C.Y. Jin, M.Y. Swinkels, R. Johne, T.B. Hoang, L. Midolo, P.J. van Veldhoven, and A. Fiore, “Optical control of the quality factor using coupled photonic crystal cavities,” The 2012 conference on Lasers and Electro-Optics (CLEO), San Jose, USA, 2012.

14)    M.Y. Swinkels, C.Y. Jin, R. Johne, T.B. Hoang, L. Midolo, P.J. van Veldhoven, and A. Fiore, “Optical control of the quality factor of photonic crystal nanocavities for cavity quantum electrodynamics,” The 3rd International Conference on Metamaterials, Photonic Crystals and Plasmonics (META), Paris, France, 2012.

15)    M.Y. Swinkels, C.Y. Jin, R. Johne, L. Midolo, T.B. Hoang, P.J. van Veldhoven, and A. Fiore, “Optical control of the quality-factor of photonic crystal nanocavities,” Physics@FOM, Veldhoven, the Netherlands, 2012.

16)    C.Y. Jin, O. Kojima, T. Kita, O. Wada, and M. Hopkinson, “Optical phase switching using quantum dots in a vertical cavity,” The 29th Symposium on Spectroscopic Technologies and Surface Sciences, Taiwan, China, 2011. (Invited)

17)    C.Y. Jin, O. Kojima, T. Kita, O. Wada, and M. Hopkinson, “Optical phase shifter using quantum dots in a vertical cavity,” The 23rd International Conference on Indium Phosphide and Related Materials (IPRM) ,Berlin, Germany, 2011.

18)    C.Y. Jin, S. Ohta, M. Hopkinson, O. Kojima, T. Kita, and O. Wada, “A tunnel injection structure for speeding up carrier dynamics in InAs/GaAs quantum dots using a GaNAs quantum-well injector,” The 2010 international conference on Solid State Devices and Materials (SSDM), Tokyo, Japan, 2010.

19)    C.Y. Jin, O. Kojima, T. Inoue, T. Kita, O. Wada, M. Hopkinson, and K. Akahane, “All-optical switch using InAs quantum dots in a vertical cavity,” The 22nd International Conference on Indium Phosphide and Related Materials (IPRM), Takamatsu, Japan, 2010

20)    S. Ohta, C.Y. Jin, M. Hopkinson, O. Kojima, T. Kita, and O. Wada, “Observation of carrier tunneling from a GaAsN quantum well to InAs quantum dots,” The 57th spring meeting of the Japan Society of Applied Physics, Kanagawa, Japan, 2010.

21)    C.Y. Jin, O. Kojima, T. Inoue, S. Ohta, T. Kita, O. Wada, M. Hopkinson, and K. Akahane, “Two-step saturation behaviour in quantum-dot-based vertical-cavity all-optical switches,” The 57th spring meeting of the Japan Society of Applied Physics, Kanagawa, Japan, 2010.

22)    C.Y. Jin, O. Kojima, T. Inoue, T. Kita, O. Wada, M. Hopkinson, and K. Akahane, “Vertical-geometry all-optical switches based on InAs/GaAs quantum dots in a cavity,” Photonics West 2010, San Francisco, USA, 2010.

23)    C.Y. Jin, O. Kojima, T. Kita, O. Wada, M. Hopkinson, and K. Akahane, “Optical nonlinearity of InAs quantum dots in a cavity for all-optical switches,” The 2009 workshop on information, nano and photonics technology (WINPTech), Kobe, Japan, 2009.

24)    S. Ohta, C.Y. Jin, M. Hopkinson, O. Kojima, T. Kita, and O. Wada, “Temperature dependent carrier tunnelling in InAs/GaAs quantum dots by using a dilute nitride quantum well injector,” The 2009 workshop on information, nano and photonics technology (WINPTech), Kobe, Japan, 2009.

25)    C.Y. Jin, O. Kojima, T. Kita, O. Wada, M. Hopkinson, and K. Akahane, “Quantum dots in a vertical cavity for all-optical switching devices,” The 2009 international conference on Solid State Devices and Materials (SSDM), Sendai, Japan, 2009.

26)    C.Y. Jin, O. Kojima, T. Kita, O. Wada, M. Hopkinson, and K. Akahane, “Theoretical design of all-optical quantum-dot switches with an asymmetric cavity structure,” The 70th autumn meeting of the Japan Society of Applied Physics, Toyama, Japan, 2009.

27)    C.Y. Jin, O. Kojima, T. Kita, O. Wada, M. Hopkinson, and K. Akahane, “Vertical-cavity all-optical quantum dot switches utilizing the inter-subband relaxation of carriers,” The 70th autumn meeting of the Japan Society of Applied Physics, Toyama, Japan, 2009.

28)    C.Y. Jin, O. Kojima, T. Kita, O. Wada, M. Hopkinson, and K. Akahane, “All-optical switching using InAs/GaAs quantum dots within a vertical cavity structure,” The 14th international conference on modulated semiconductor structures (MSS), Kobe, Japan, 2009.

29)    C.Y. Jin, O. Wada, M. Hopkinson, O. Kojima, T. Kita, and K. Akahane, “All-optical switches based on InAs/GaAs quantum dots in a vertical cavity,” UK semiconductors 2009, Sheffield, UK, 2009.

30)    C.Y. Jin, O. Kojima, T. Kita, O. Wada, M. Hopkinson, and K. Akahane, “Investigation of an ultra-fast all-optical quantum dot switch with a vertical cavity structure,” The 56th spring meeting of the Japan Society of Applied Physics and Related Societies, Tsukuba, Japan, 2009.

31)    C.Y. Jin, O. Kojima, T. Kita, O. Wada, “Theoretical design of a vertical-cavity quantum-dot switch,” The 2008 workshop on information, nano and photonics technology (WINPTech), Kobe, Japan, 2008.

32)    C.Y. Jin, H.Y. Liu, T.J. Badcock, K.M. Groom, D.J. Mowbray, M. Hopkinson, O. Wada, “Novel, simple model for high temperature stability of InAs/GaAs self-assembled quantum dot lasers with optimum p-type modulation doping,” The 2008 international conference on Solid State Devices and Materials (SSDM), Tsukuba, Japan, 2008.

33)    H.Y. Liu, Y. Qiu, C.Y. Jin, T. Walther and A.G. Cullis, “1.55-μm InAs quantum dots grown on GaAsSb/GaAs metamorphic buffer layer,” The 2008 international conference on Molecular Beam Epitaxy (MBE2008), Vancouver, Canada, 2008.

34)    C.Y. Jin, H.Y. Liu, K.M. Groom, Q. Jiang, and M. Hopkinson, “Effects of photon and thermal coupling mechanism on self-assembled InAs/GaAs quantum dot lasers,” One-day quantum dot meeting, Imperial College, London, UK, 2008.

35)    C.Y. Jin, H.Y. Liu, S.Y. Zhang, Q. Jiang, S.L. Liew, and M. Hopkinson, “Optical transitions in type-II InAs/GaAs quantum dots covered by a GaAsSb strain-reducing layer,” UK Compound Semiconductors 2007, Sheffield, UK, 2007.

36)    C.Y. Jin, H.Y. Liu, K.M. Groom, M. Hopkinson, T.J. Badcock, R.J. Royce, and D.J. Mowbray “Photon coupling mechanism in 1.3-μm quantum-dot lasers,” The 2007 conference on Lasers and Electro-Optics (CLEO), Baltimore, MD, USA, 2007.

37)    C.Y. Jin, H.Y. Liu, S.Y. Zhang, R. Airey and M. Hopkinson “Very low-threshold-current-density 1.34-μm GaInNAs/GaAs quantum well lasers with a quaternary-barrier structure,” The 2007 conference on Lasers and Electro-Optics (CLEO), Baltimore, MD, USA, 2007.

38)    C.Y. Jin, H.Y. Liu, K.M. Groom, M. Hopkinson, T.J. Badcock, R.J. Royce, and D.J. Mowbray “Photon coupling model for the negative T0 in self-assembled quantum-dot lasers,” One day quantum dot meeting, University of Nottingham, Nottingham, UK, 2007.

39)    C.Y. Jin, P. Navaretti, H.Y. Liu, R. Airey, and M. Hopkinson, “High performance 1.34-μm GaInNAs quantum well lasers with quaternary barrier layers,” UK Compound Semiconductors 2006, Sheffield, UK, 2006.

40)    P.M. Smowton, I.C. Sandall, J.D. Thomson, T. Badcock, D.J. Mowbray, C.Y. Jin, H.Y. Liu, M. Hopkinson, “Auger Recombination is NOT necessary to explain the temperature dependence of threshold in p-doped quantum dot lasers,” The 20th international semiconductor laser conference (ISLC), Hawaii, USA, 2006. (Invited)

41)    H.Y. Liu, T.J. Badcock, K.M. Groom, M. Hopkinson, M. Gutierrez, D.T. Childs, C.Y. Jin, R.A. Hogg, I.R. Sellers, D.J. Mowbray, M.S. Skolnick, R. Beanland, D.J. Robbins, “High-performance 1.3-μm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature,” Semiconductor Lasers and Laser Dynamics (SPIE), Bellingham, WA, USA, 2006. (Invited)

42)    P. Navaretti, C.Y. Jin, H.Y. Liu, R. Airey, M. Hopkinson, “Dilute nitride-based 1.3-μm high performance lasers,” Semiconductor Lasers and Laser Dynamics (SPIE), Bellingham, WA, USA, 2006. (Invited)

 
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