从1997年至2011年,发表学术论文95篇,其中SCI论文31篇(平均影响因子2.02)。
1.        J.P. Campbell, K.P. Cheung, L. Yu, J.S. Suehle, A. Oates, K. Sheng, “Geometric Magnetoresistance Mobility Extraction in Highly Scaled Transistors”, IEEE Electron Device Letters, Vol. 32, No. 1, 2011, pp. 75-77
2.        L. Yu, G. T. Dunne, K. S. Matocha, K. P. Cheung, J. S. Suehle, and K. Sheng, “Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments”, IEEE Transactions on Device and Materials Reliability, Vol. 10, No. 4, December 2010, pp. 418-426
3.        L. Yu, K.P. Cheung, V. Tilak, G. Dunne, K. Matocha, J.P. Campbell, J.S. Suehle and K. Sheng, “Wafer-level Hall Measurement on SiC MOSFET”, Materials Science Forum, Vols 645-648, 2010, pp. 979-982
4.        L. Yu, K.P. Cheung, G. Dunne, K. Matocha, J.S. Suehle and K. Sheng, “Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices”, Materials Science Forum, Vols 645-648, 2010, pp. 805-808
5.        钱照明、盛况,“大功率半导体器件的发展与展望”,大功率变流技术,2010年第1期,第1-9页
6.        K. Sheng, ‘Maximum Junction Temperature of SiC Power Devices’, IEEE Transactions on Electron Devices, Vol. 56, No. 2, 2009, pp. 337-342
7.        L. Yu, K.P. Cheung, J.S. Suehle, J.P. Campbell, K. Sheng, A.J. Lelis, S.H Ryu, ‘Channel Hot-Carrier Effect of 4H-SiC MOSFET’, Material Science Forum, Vols. 615-617, 2009, pp 813-816
8.        K. Sheng, Y. Zhang, M. Su, L. Yu and J.H. Zhao, ‘High Frequency Switching of SiC High Voltage LJFET’, IEEE Transactions on Power Electronics, Vol. 24, No. 1, 2009, pp. 271-277
9.        Y. Zhang, X. Hu, J. H. Zhao, K. Sheng, W. R. Cannon, X. Wang and L. Fursin, 'Rheology and thermal conductivity of diamond powder filled liquid epoxy encapsulants for electronic packaging', IEEE Transactions on Packaging, Vol. 32, No. 4, 2009, pp. 716 - 723
10.    Y. Zhang, K. Sheng, M. Su, J.H. Zhao, P. Alexandrov and L. Fursin, ‘Development of High Temperature Lateral HV and LV JFETs in 4H-SiC’, Material Science Forum, Vols. 600-603, 2009, pp. 1091-1094
11.    K. Sheng, Y. Zhang, M. Su, J.H. Zhao, X. Li, P. Alexandrov and L. Fursin, “Demonstration of the First SiC Power Integrated Circuit”, International Journal of Solid-State Electronics, Vol. 52, No. 10, 2008, pp. 1636-1646
12.    L. Yu and K. Sheng, “Modeling and Design of a Monolithically Integrated Power Converter on SiC”, International Journal of Solid-State Electronics, Vol. 52, No. 10, 2008, pp. 1625-1630
13.    L. Yu, and K. Sheng, ‘Modeling and Optimal Device Design for 4H-SiC Super-Junction Devices’, IEEE Transactions on Electron Devices, Vol. 55, No. 8, 2008, pp. 1961-1969
14.    Y. Zhang, K. Sheng, M. Su, J.H.. Zhao, P. Alexandrov, X. Li, L. Fursin and M. Weiner, ‘Development of 4H-SiC LJFET Based Power IC’, IEEE Transactions on Electron Devices, Vol. 55, No. 8, 2008, pp. 1934-1945
15.    J.H. Zhao, K. Sheng, Y. Zhang, and M. Su, “Current Status and Future Prospects of SiC Power JFETs and ICs”, IEICE Transaction on Electronics, Vol. E91-C, No. 7, 2008, pp. 1031-1041
16.    Y. Zhang, K. Sheng, M. Su, J. H. Zhao, P. Alexandrov and L. Fursin, ‘1000V, 9.1mΩ•cm2 Normally-Off 4H-SiC Lateral RESURF JFET for Power Integrated Circuits Application’, IEEE Electron Device Lett., Vol. 28, No. 5, May 2007, pp. 404-407
17.    M. Su, K. Sheng, Y. Li, Y. Zhang, J. Wu, J. H. Zhao, J. Zhang, L. X. Li, ‘430-V 12.4-mΩ·cm2 Normally off 4H-SiC Lateral JFET’, IEEE Electron Device Lett., vol.27, No. 10, Oct. 2006, pp. 834- 836.
18.    K. Sheng, L. Yu, J. Zhang and J.H. Zhao, ‘High Temperature Characterization of SiC BJTs for Power Switching Applications’, International Journal of Solid-State Electronics, Volume 50, No. 6, 2006, pp. 1073-1079
19.    L. Yu and K. Sheng, ‘Breaking the theoretical limit of SiC unipolar power device - a simulation study’, International Journal of Solid-State Electronics, Volume 50, No. 6, 2006, pp. 1062-1072
20.    J.H. Zhao, P. Alexandrov, Y. Li, X. Li, K. Sheng and R. Lebron-Velilla, ‘Design, Fabrication and Application of 4H-SiC Trenched-and-Implanted Vertical JFETs’, Material Science Forum, Vols. 527-529, 2006, pp. 1191-1194
21.    J. Zhang, J. Wu, P. Alexandrov, T. Burke, K. Sheng and J.H. Zhao, ‘1836 V, 4.7 mW•cm2 High Power 4H-SiC Bipolar Junction Transistor’, Material Science Forum, Vols. 527-529, 2006, pp. 1417-1420
22.    J.P. Campbell, K.P. Cheung, L. Yu, J.S. Suehle, K. Sheng, A. Oates, “New Methods for the Direct Extraction of Mobility and Series Resistance from a Single Ultra-Scaled Device”, Digest of Technical Papers - Symposium on VLSI Technology, 2010, pp. 75-76 
23.    L.C. Yu, K.P. Cheung, V. Tilak, G. Dunne, K. Matocha, J.P. Campbell, J.S. Suehle and K. Sheng, ‘Demonstration of a Wafer-level Hall-Mobility Measurement Technique’, 40th IEEE Semiconductor Interface Specialists Conference, 2009, p.27-30
24.    L.C. Yu, K.P. Cheung, V. Tilak, G. Dunne, K. Matocha, J.P. Campbell, J.S. Suehle and K. Sheng, ‘Wafer-level Hall Measurement on SiC MOSFET’, 13th International Conference on Silicon Carbide and Related Materials (ICSCRM), Fr-1A-5, 2009
25.    L.C. Yu, K.P. Cheung, G. Dunne, K. Matocha, J.S. Suehle and K. Sheng, ‘Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices’, 13th International Conference on Silicon Carbide and Related Materials (ICSCRM), We-P-60, 2009
26.    L.C. Yu, K.P. Cheung, V. Tilak, G. Dunne, K. Matocha, J.P. Campbell, J.S. Suehle and K. Sheng, ‘A Fast, Simple Wafer-level Hall-Mobility Measurement Technique’, IEEE International Integrated Reliability Workshop Final Report, 2009, pp. 73-76
27.    K. Sheng, R. Radhakrishnan, Y. Zhang and J.H. Zhao, ‘A Vertical SiC JFET with a Monolithically Integrated JBS Diode’, Proceedings of International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2009, pp. 255-258
28.    K. Sheng, Y. Zhang, L. Yu and J. H. Zhao, ‘Design of High Temperature SiC LJFET-Based Logic Inverter and Integrated Gate Driver’, Proceedings of International Power Electronics and Motor Control Conference, 2009, pp. 302-306
29.    S. Pyo and K. Sheng, ‘Junction Temperature Dynamics of Power MOSFET and SiC Diode’, Proceedings of International Power Electronics and Motor Control Conference, 2009, pp. 269-273
30.    J.P. Campbell, L. Yu, K.P. Cheung, J. Qin, J.S. Suehle, A. Oates, K. Sheng, ‘Large Random Telegraph Noise in Sub-Threshold Operation of Nano-Scale nMOSFETs’, Proceedings of International Conference on IC Design and Technology, 2009, pp. 17-20
31.    J.P. Campbell, J. Qin, K.P. Cheung, L. Yu, J.S. Suehle, A. Oates, K. Sheng, ‘Random Telegraph Noise in Highly Scaled nMOSFETs’, IEEE International Reliability Physics Symposium, 2009, pp. 382-388
32.    L. Yu, K.P. Cheung, J. Campbell, J.S. Suehle and K. Sheng, ‘Oxide Reliability of SiC MOS Devices’, IEEE Int. Integrated Rel. Workshop Final Report, 2008, pp. 141-144
33.    J.P. Campbell, J. Qin, K.P. Cheung, L. Yu, J.S. Suehle, A. Oates, K. Sheng, ‘The Origins of Random Telegraph Noise in Highly Scaled SiON nMOSFETs’, IEEE Int. Integrated Rel. Workshop Final Report, 2008, pp. 105-109
34.    L. Yu, K.P. Cheung, J. Suehle, J. Campbell, K. Sheng, A. Lelis, S.H. Ryu, ‘Channel Hot-Carrier Effect of 4H-SiC MOSFET’, European Conference on Silicon Carbide and Related Materials (ECSCRM), We-1-5, 2008
35.    K. Sheng, L. Yu, Y. Zhang, M. Su and J.H. Zhao, ‘High Frequency Switching of SiC High Voltage LJFET’, Proceedings of International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2008, pp. 229-232
36.    L. Yu, K. Sheng and J.H. Zhao, ‘Modeling and Design of a Monolithically Integrated Power Converter on SiC,’ International Semiconductor Device Research Symposium, 2007, pp. 660-661
37.    J. H. Zhao, Y. Zhang, M. Su, K. Sheng, P. Alexandrov and L. Fursin, ‘Demonstration of the First Power IC on 4H-SiC,’ International Semiconductor Device Research Symposium, 2007, pp. 240-241
38.    Y. Zhang, K. Sheng, M. Su, J. H. Zhao, P. Alexandrov and L. Fursin, ‘Development of High Temperature Lateral HV and LV JFETs in 4H-SiC,’ International Conference on Silicon Carbide and Related Materials (ICSCRM), 2007, Th-P-70
39.    L. Yu and K. Sheng, ‘An Analytical Model for 4H-SiC Super Junction Devices’, Proceedings of the International Power Electronics and Motor Control Conference (IPEMC’06), August, 2006, pp. 1188-1191
40.    Tang.J, Wang.X, Wang.L, Cao.S, Wang.Z, Gao.J, Sheng.K, ‘Some applications of the high-mode-merging method’,PIERS 2006 Cambridge - Progress in Electromagnetics Research Symposium, Proceedings, p 347-351, 2006
41.    J.H. Zhao, K. Sheng and R. Lebron-Velilla, ‘Silicon Carbide Schottky Barrier Diode’, International Journal of High Speed Electronics and Systems (IJHSES), 2005, pp. 821-866   
42.    P. Sannuti, X. Li, F.Yan, K. Sheng and J.H.Zhao, ‘Channel Electron Mobility in 4H-SiC Lateral Junction Field Effect Transistors’, International Journal of Solid-State Electronics, Volume 49, No. 12, December, 2005, pp. 1900-1904
43.    K. Sheng and S. Hu, ‘Design Criteria of High-Voltage Lateral RESURF JFETs on 4H-SiC, IEEE Transactions on Electron Devices, Volume 52, No. 10, October, 2005, pp. 2300-2308
44.    S. Hu and K. Sheng ‘A new edge termination technique for 4H-SiC power devices’, International Journal of Solid-State Electronics, Volume 48, No. 10-11, 2004, pp. 1861-1866
45.    U.N.K. Udugampola, R.A. McMahon, F. Udrea, K. Sheng, G.A.J. Amaratunga, E.M.S. Narayanan, S. Hardikar and M.M. De Souza, ‘Dual gate lateral inversion layer emitter transistor for power and high voltage integrated circuits’, IEE Proceedings-Circuits, Devices and Systems, Volume 151, No. 3, 17 June 2004, pp. 203-6
46.    Y. Yokoyama, X. Li, K. Sheng, A. Mihaila, T. Traikovic, F. Udrea, G.A.J. Amaratunga and K. Okano, ‘A field effect transistor using highly nitrogen-doped CVD diamond for power device applications’, Applied Surface Science, Volume 216, 2003, pp. 483-489
47.    F. Udrea, U.N.K. Udugampola, K. Sheng, R.A. McMahon, G.A.J. Amaragunga, E.M.S. Narayanan, M.M. De Souza and S. Hardikar, ‘Experimental demonstration of an ultra-fast double gate inversion layer emitter transistor (DG-ILET)’, IEEE Electron Device Letters, Volume 23, No. 12, 2002, pp. 725-727
48.    S. Huang, G.A.J. Amaratunga, F. Udrea, K. Sheng, P. Waind and P. Talor, ‘A Dual-Channel IEGT,’ Microelectronics Journal, Volume 32, No. 9, 2001, pp. 755-761
49.    D.M. Garner, F. Udrea, H.T. Lim, G. Ensell, A.E. Popescu, K. Sheng and W.I. Milne, 'Silicon-on-insulator power integrated circuits', Microelectronics Journal, Volume 32, No. 5-6, 2001, pp. 517-526
50.    S. Huang, K. Sheng, F. Udrea and G.A.J. Amaratunga, ‘A dynamic n-buffer insulated gate bipolar transistor’, International Journal of Solid-State Electronics, Volume 45, No. 1, 2001, pp. 173-182
51.    X. He, Y. Yang, K. Sheng, B.W. Williams and S.J. Finney, ‘Composite soft switching configuration for inverters using bridge leg modules’, Journal of Electronics, Vol. 18, No. 1, pp. 61-69
52.    X. He, K. Sheng, B.W. Williams, Z. Qian and S.J. Finney, ‘A composite soft-switching inverter configuration with unipolar pulse width modulation control’, IEEE Transactions on Industrial Electronics, Volume 48, No. 1, 2001, pp. 118-126
53.    K. Sheng, F. Udrea and G.A.J. Amaratunga, ‘Optimum carrier distribution of the IGBT’, Solid-State of Electronics, Volume 44, No. 9, 2000, pp. 1573-1583
54.    K. Sheng, S.J. Finney and B.W. Williams, 'A review on IGBT models', IEEE Transactions on Power Electronics, Volume 15, No. 6, 2000, pp. 1250-1266
55.    X. He, K. Sheng, S.J. Finney, Z. Qian and B.W. Williams, 'New soft switching techniques for three phase voltage source inverters', International Journal of Electronics, Volume 87, No. 5, 2000, pp. 605-622
56.    F. Udrea, D. Garner, K. Sheng, A. Popescu, H. T. Lim and W.I. Milne, 'SOI power devices', IEE Electronics & Communication Engineering Journal, Volume 12, No. 1, 2000, pp. 27-40
57.    K. Sheng, S.J. Finney and B.W. Williams, 'Thermal stability of IGBT high frequency operation', IEEE Transactions on Industrial Electronics, Volume 47, No. 1, 2000, pp. 9-16
58.    K. Sheng, S.J. Finney and B.W. Williams, 'A new analytical IGBT model with improved electrical characteristics', IEEE Transactions on Power Electronics, Volume 14, No. 1, 1999, pp. 98-107
59.    N. McNeill, K. Sheng, B.W. Williams and S.J. Finney 'Assessment of off-State negative gate voltage requirements for IGBTs', IEEE Transactions on Power Electronics, Volume 13, No. 3, 1998, pp. 436-440
60.    K. Sheng, B.W. Williams and S.J. Finney, 'Maximum operating junction temperature of PT and NPT IGBTs', IEE Electronics Letters, Nov 12 1998, Volume 34, No. 23, pp. 2276-2277
61.    K. Sheng, S.J. Finney and B.W. Williams, 'Fast and accurate IGBT model for PSpice', Electronics Letters, Volume 32, No. 25, 1996, pp. 2294-2295
62.    K. Sheng, L. Yu, J. Zhang and J.H. Zhao, ‘High Temperature Characterization of SiC BJTs for Power Switching Applications’ International Semiconductor Device Research Symposium, 2005, pp. 168-169
63.    J.H. Zhao, J. Zhang, X. Li and K Sheng, ‘Effect of graded base doping on the gain of SiC BJT’, International Semiconductor Device Research Symposium, 2005, pp. 398-399
64.    K. Sheng, J.H. Lee, P. Alexandrov and J.H. Zhao, ‘Characterization and application of SiC TI-VJFETs’, International Semiconductor Device Research Symposium, 2005, pp. 296-297
65.    L. Yu and K. Sheng, ‘Breaking the theoretical limit of SiC unipolar power device - a simulation study’, International Semiconductor Device Research Symposium, 2005, pp. 42-43
66.    J.S. Lai, H. Yu, J. Zhang, P. Alexandrov, Y. Li, J.H. Zhao, K. Sheng and A. Hefner, ‘Characterization of normally-off SiC vertical JFET devices and inverter circuits’, Industry Applications Conference, 2005, pp. 404-409
67.    Y. Wang, K. P. Cheung, K. Sheng, C.S. Pai, ‘A new low-cost MEMS capacitive pressure sensor concept’, Proceedings of SPIE - The International Society for Optical Engineering, Volume 5592, Nanofabrication: Technologies, Devices, and Applications, 2005, pp. 313-319
68.    S. Hu, K. Sheng, ‘A study of oxide reliability limitation on different field plate based termination techniques for SiC power devices’, Proceedings of the International Power Electronics and Motor Control Conference (IPEMC’04), August, 2004, pp. 868-872
69.    K. Sheng, ‘A MOS-Controlled Diode (MCD) for Power Integrated Circuits’, Proceedings of the International Power Electronics and Motor Control Conference (IPEMC’04), August, 2004, pp. 863-867
70.    J. H. Zhao, K. Tone, K. Sheng, X. Li, P. Alexandrov, L. Fursin, M. Weiner, T. Burke, ‘A High Performance 4H-SiC Normally-off VJFET’, Proceedings of the International Power Electronics and Motor Control Conference (IPEMC’04), 2004, pp. 342-346
71.    S. Hu, K. Sheng, ‘A New Edge Termination Technique for SiC Power Devices’, Proceedings of the International Semiconductor Device Research Symposium (ISDRS), Washington DC, 2003, pp. 122-123
72.    K. Sheng, ‘MOS-Controlled Diode (MCD) on Silicon-On-Insulator (SOI), Proceedgins of the 29th Annual Conference of the IEEE Industrial Electronics Society, IECON, Roanoke, USA, 2003, pp. 2602-2606
73.    U.N.K. Udugampol, R.A. McMahon, F. Udrea, K. Sheng, G.A.J. Amaratunga, E.M.S. Narayanan, S. Hardikar and M.M. De Souza, ‘Dual gate lateral inversion layer emitter transistor for power and high voltage integrated circuits’, Proceedings of International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2003, pp. 216 –219
74.    P. Sannuti, X. Li, F. Yan, K. Sheng, J. H. Zhao, ‘Channel Mobility Study of 4H-SiC Lateral JFET’, 17th Annual Symposium Laboratory For Surface Modification, 2003
75.    U.N.K. Udugampola, G.F.W. Khoo, K. Sheng, R.A. McMahon, F. Udrea and G.A.J. Amaratunga, ‘Characterisation of dual gate lateral inversion layer emitter transistor’, International Conference on Power Electronics Machines and Drives, Bath, UK, 2002, pp. 557-561
76.    K. Sheng, U.N.K. Udugampola, G.F. Khoo, F. Udrea, G.A.J. Amaratunga, R.A. McMahon, E.M.S. Narayanan and S. Hardikar, ‘Dual Gate Lateral Inversion Layer Emitter Transistor’, IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Santa Fe, USA, 2002, pp. 37-40
77.    G. A. J. Amaratunga, R. Ng, K. Sheng, T. Trajkovic, F. Udrea, MOSFETS for POWER ICS: Present Status and Future Development, invited paper, Proceedings of the 10th EPE-PEMC Conference, Cavtat & Dubrovnik – Croatia, 2002
78.    R. Ng, K. Sheng, F. Udrea and G.A.J. Amaratunga, ‘Lateral unbalanced Super Junction (USJ)/3D-RESURF for high breakdown voltage on SOI’, IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Osaka, Japan, 2001, pp. 395-398
79.    D. Garner, F. Udrea, G. Ensell, K. Sheng and G.A.J. Amaratunga, ‘Failure mechanisms of SOI high-voltage LIGBTs and LDMOSes under unclamped inductive switching’, IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Osaka, Japan, 2001, pp. 335-338
80.    A. Popescue, F. Udrea, K. Sheng, D. Garner, H.T. Lim, R. Ng, G. Khoo and W. Milne, ‘Advanced RESURF concepts in SOI devices – optimization and fabrication’, Silicon-on-Insulator Technology and Devices X, Proceedings of the Tenth International Symposium (Electrochemical Society Proceedings Vol.2001-3), Electrochem. Soc., Washington, DC, 2001, pp. 325-330
81.    A. Mumtaz*, K. Sheng, D. Garner, G. Khoo, T. Wilmhurst, F. Udrea, M. Rahimo, D. Hinchley, R.A. McMahon and G.A.J. Amaratunga, ‘Towards a single chip photovoltaic inverter for grid connected systems’, Regional World Renewable Energy Congress and The 7th Arab Conference on Solar Energy, Sharjah, UAE, 2001
82.    K. Sheng, F. Udrea and G.A.J. Amaratunga, ‘Unconventional Behaviour of CoolMOS’, European Solid-State Device Researc Conference, Nuremberg, Germany, 2001, pp 251-254
83.    K. Sheng, F. Udrea and G.A.J. Amaratunga, ‘A Novel Double Gate AC Switch’, European Solid-State Device Researc Conference, Nuremberg, Germany, 2001, pp. 407-410
84.    A. Mihaila, F. Udrea, K. Sheng and R. Azar, ‘Mixed-mode investigation of hybrid sic/si cascode configurations’, ISDRS’2001, Washington, U.S.A., Nov. 2001, pp. 575-578
85.    R. Ng, F. Udrea, K. Sheng, G.A.J. Amaratunga, ‘A study of the CoolMOS integral diode: analysis and optimisation’, 2001 International Semiconductor Conference. CAS 2001 Proceedings (Cat. No.01TH8547). IEEE. Volume 2, 2001, pp. 461-464
86.    K. Sheng, F. Udrea, G.A.J. Amaratunga, ‘Optimum carrier distribution of the IGBT’, Proceedings of EPE-PEMC, Kosice, Slovak Republic, 2000, Volume 3, pp. 209-215
87.    K. Sheng, F. Udrea, T. Trajkovic, S.M. Huang, G.A.J. Amaratunga and P. Waind, ‘PT and NPT IGBTs up to 1.2kV - which is optimum?’, Proceedings of EPE-PEMC, Kosice, Slovak Republic, 2000, Volume 3, pp. 204-208
88.    K. Sheng, S. M. Huang, F. Udrea and G.A.J. Amaratunga, ‘Quasi-punch-through structure for power semiconductor devices’, Proceedings of the Third International Conference on Power Electronics and Motion Control, Beijing, China, 2000, pp. 224-228
89.    S.M. Huang, K. Sheng, F. Udrea and G.A.J. Amaratunga, ‘Investigation of IGBT blocking characteristics’, Proceedings of the Third International Conference on Power Electronics and Motion Control, Beijing, China, 2000, pp. 407-411
90.    D.M. Garner, F. Udrea, H.T. Lim, G. Ensell, A.E. Popescu, K. Sheng and W.I. Milne, ‘Silicon on Insulator Power Integrated Circuits’, ISPS’2000, Prague, Czech Republic, pp. 123-129
91.    K. Sheng, B.W. Williams, X. He and Z. Qian, ‘Measurement of IGBT switching frequency limit’, Proceedings of Power Electronics Specialists Conference, Charleston, USA, 1999, pp. 375-379
92.    X. He, B.W. Williams, K. Sheng, S.J. Finney and Z. Qian, ‘A composite soft switching circuit for power inverters’, Proceedings of Applied Power Electronics Conference, Dallas, USA, 1999, pp. 1272-1278
93.    H. T. Lim, F. Udrea, D. Garner, K. Sheng, and W. I. Milne, ‘Partial SOI LDMOSFETs for high-side switching’, Proceedings of the International Semiconductor Conference, CAS, Sinaia, Romania, 1999, pp. 376-380
94.    K. Sheng, S.J. Finney and B.W. Williams, ‘An improved understanding of IGBT forward conduction’, Proceedings of the Second International Conference on Power Electronics and Motion Control, Hangzhou, China, 1997, Volume 1, pp. 48-55
95.    K. Sheng, S.J. Finney, B.W. Williams, X. N. He and Z. M. Qian, ‘IGBT switching losses’, Proceedings of the Second International Conference on Power Electronics and Motion Control, Hangzhou, China, 1997, Volume 1, pp. 274-277