物理学院
物理学院
物理学院
物理学院
物理学院
物理学院
物理学院
物理学院
物理学院
物理学院
杨洪新,浙江大学物理学院,求是特聘教授
从事自旋电子学基础及应用研究,针对拓扑磁结构和磁随机存储器(MRAM),开展反对称交换耦合(DMI)、垂直磁各向异性以及磁读写等的理论计算方法发展,物理机制探索,材料体系开发和自旋电子学器件设计等研究,近几年来取得的主要创新成果概况如下:
1、建立实空间自旋螺旋态短自旋波超原胞计算DMI方法,被国际同行广泛使用。利用该方法,解决了系列关于DMI的基础物理问题:
(1) 预言多种铁磁金属和重金属界面的DMI,并从第一性原理角度揭示Fert-Levy型DMI的物理图像,获实验验证。
(2) 预言多种铁磁金属和轻元素界面的DMI,并从第一性原理角度揭示Rashba效应诱导的DMI物理图像,获实验验证。
2、在VASP中实现了倒空间自旋螺旋态广义布洛赫定理计算DMI方法,使合金、弯曲的二维磁体等复杂材料体系的DMI计算成为可能:
(1) 预言空间反演对称破缺的二维Janus磁体具有本征的DMI及磁斯格明子;揭示p-4m2对称保护的二维磁性材料中具有内禀各向异性DMI及反磁斯格明子;提出多铁效应实现磁斯格明子四重态机制并应用其模拟实现单赛道完备逻辑门。
(2) 建立磁性合金体系中计算成分梯度DMI的物理模型,获实验验证。
3、建立轨道杂化分辨的磁各向异性计算方法。利用该套方法,揭示了铁磁金属d轨道和轻元素p轨道杂化增强垂直磁各向异性的物理机制,并预言多种材料中可同时调控的DMI和垂直磁各向异性,均获实验验证。
4、提出反对称交换耦合力矩翻转垂直磁化矢量这一全新的磁写入方式,是自1996年Bell实验室的Slonczewski博士等预言自旋转移力矩以及自旋轨道力矩后很少的几种力矩翻转垂直磁机制之一,为实现全电压控制的低功耗反对称交换耦合力矩磁随机存储器(DMI-torque MRAM)提供理论基础。
5.提出双半子扭矩翻转面内磁化矢量的全电压控制磁写入新方式。
在Nat. Rev. Phys.,Nat. Mater., Nat. Nanotech.,Phys. Rev. Lett. [11篇],Nat. Commun. 等杂志上发表SCI论文140余篇,相关成果被国内外同行在Rev. Mod. Phys., Nature,Science,Phys. Rev. Lett.等期刊引用8700余次,单篇最高被引1000余次,单篇被引超过300次的有5篇,单篇被引超过100次的有17篇,H-index 40,入选2023和2024年爱思唯尔物理学领域高被引学者。
多次在APS March Meeting及InterMag等重要国际会议作邀请报告,担任APS March Meeting的“Spin Textures and Chiral Magnetism in 2D Materials”分会主席,组织2019年MMM分会“Spins and Magnetism in Topological Materials”并任分会主席。
IEEE senior member。CPL、CPB、《物理学报》和《物理》四刊青年编委。
主持国家重点研发子课题、自然科学基金面上、中科院前沿科学重点研究计划“从0到1”原始创新、北京凝聚态物理国家研究中心开放课题重点项目、国家海外高层次人才青年项目(2017),参与基金委重大项目、浙江省尖兵计划项目等。
现有博士后opening,每年招收2-3名硕士/博士研究生。
已毕业学生:
崔琪睿 (本科西北工业大学) 博士 (现在芬兰做博士后)
李彭 (本科清华大学) 博士 现在新加坡国立大学苏州分院 工作
朱英梅 (天津工业大学) 博士 现在中电海康 工作
尕永龙 (本科兰州大学) 博士 现在浙江大学做博士后
已出站博士后
白春旭,现在 南阳师范大学,教授
梁敬华,现在 汕头大学,副教授
于东星,现在 兰州大学,特聘研究员
Selected Publications:
Jiawei Liu, Jiawei Jiang, Liming Wang, Liang Zhou, Rui Liang, Shuilin Li, Ziying Li, Kai Chang, Hongxin Yang, Nujiang Tang
Physical Review Letters 134, 116702 (2025)
29.Voltage-Controlled Bimeron-Torques Switching of In-Plane Magnetization
Dongxing Yu, Yonglong Ga, Peng Li, Jiawei Jiang, Jinghua Liang, Liming Wang, Chenglong Jia, Kai Chang, Hongxin Yang
Physical Review Letters 133, 206701 (2024)
Chenhui Zhang, Ze Jiang, Jiawei Jiang, Wa He, Junwei Zhang, Fanrui Hu, Shishun Zhao, Dongsheng Yang, Yakun Liu, Yong Peng, Hongxin Yang, Hyunsoo Yang
Nature Communications 15, 4472 (2024)
27. Large and tunable magnetoresistance in van der Waals ferromagnet/semiconductor junctions
Wenkai Zhu, Yingmei Zhu, Tong Zhou, Xianpeng Zhang, Hailong Lin, Qirui Cui, Faguang Yan, Ziao Wang, Yongcheng Deng, Hongxin Yang, Lixia Zhao, Igor Žutić, Kirill D. Belashchenko, Kaiyou Wang
Nature Communications 14, 5371 (2023)
26. Intrinsic Atomic-Scale Antiferroelectric VOF3 Nanowire with Ultrahigh-Energy Storage Properties
T Xu, J Zhang, T Shimada, J Wang, H Yang
Nano Letters 23 (19), 9080-9086 (2023)
25. From Early Theories of Dzyaloshinskii–Moriya Interactions in Metallic Systems to Today’s Novel Roads
Albert Fert, Mairbek Chshiev, Andre Thiaville, Hongxin Yang
Journal of the Physical Society of Japan 92 (8), 081001 (2023)
24. Voltage-Controlled Dzyaloshinskii-Moriya Interaction Torque Switching of Perpendicular Magnetization
D Yu, Y Ga, J Liang, C Jia, H Yang
Physical Review Letters 130, 056701 (2023)
23. First-principles calculations for Dzyaloshinskii–Moriya interaction
H Yang, J Liang, Q Cui
Nature Reviews Physics 5, 43–61 (2023)
22. Gradient-Induced Dzyaloshinskii–Moriya Interaction
J Liang, M Chshiev, A Fert, H Yang
Nano Letters 22, 10128-10133 (2022)
21. Rashba–Edelstein Effect in the h‐BN Van Der Waals Interface for Magnetization Switching
Qidong Xie, Weinan Lin, Jinghua Liang, Hengan Zhou, Moaz Waqar, Ming Lin, Siew Lang Teo, Hao Chen, Xiufang Lu, Xinyu Shu, Liang Liu, Shaohai Chen, Chenghang Zhou, Jianwei Chai, Ping Yang, Kian Ping Loh, John Wang, Wanjun Jiang, Aurelien Manchon, Hongxin Yang, Jingsheng Chen
Advanced Materials 34 (33), 2109449 (2022)
20. Quantifying the Dzyaloshinskii-Moriya Interaction Induced by the Bulk Magnetic Asymmetry
Qihan Zhang, Jinghua Liang, Kaiqi Bi, Le Zhao, He Bai, Qirui Cui, Heng-An Zhou, Hao Bai, Hongmei Feng, Wenjie Song, Guozhi Chai, O Gladii, H Schultheiss, Tao Zhu, Junwei Zhang, Yong Peng, Hongxin Yang, Wanjun Jiang
Physical Review Letters 128, 167202 (2022)
Q Cui, Y Zhu, Y Ga, J Liang, P Li, D Yu, P Cui, H Yang
Nano Letters 22 (6), 2334-2341 (2022)
18. Skyrmions-based logic gates in one single nanotrack completely reconstructed via chirality barrier
D Yu, H Yang, M Chshiev, A Fert
National Science Review 9, nwac021 (2022)
17. Room-temperature ferromagnetism at an oxide-nitride interface
Qiao Jin, Zhiwen Wang, Qinghua Zhang, Yonghong Yu, Shan Lin, Shengru Chen, Mingqun Qi, He Bai, Qian Li, Le Wang, Xinmao Yin, Chi Sin Tang, Andrew TS Wee, Fanqi Meng, Jiali Zhao, Jia-Ou Wang, Haizhong Guo, Chen Ge, Can Wang, Wensheng Yan, Tao Zhu, Lin Gu, Scott A Chambers, Sujit Das, Gang-Qin Liu, Shanmin Wang, Kui-juan Jin, Hongxin Yang, Er-Jia Guo
Physical Review Letters 128, 017202 (2022)
Ruyi Chen, Qirui Cui, Liyang Liao, Yingmei Zhu, Ruiqi Zhang, Hua Bai, Yongjian Zhou, Guozhong Xing, Feng Pan, Hongxin Yang, Cheng Song
Nature Communications 12, 3113 (2021)
15. Néel-Type Elliptical Skyrmions in a Laterally Asymmetric Magnetic Multilayer
Baoshan Cui, Dongxing Yu, Ziji Shao, Yizhou Liu, Hao Wu, Pengfei Nan, Zengtai Zhu, Chuangwen Wu, Tengyu Guo, Peng Chen, Heng-An Zhou, Li Xi, Wanjun Jiang, Hao Wang, Shiheng Liang, Haifeng Du, Kang L. Wang, Wenhong Wang, Kehui Wu, Xiufeng Han, Guangyu Zhang, Hongxin Yang, Guoqiang Yu
Advanced Materials 33, 2006924 (2021)
14. Strain‐Mediated High Conductivity in Ultrathin Antiferromagnetic Metallic Nitrides
Qiao Jin, Hu Cheng, Zhiwen Wang, Qinghua Zhang, Shan Lin, Manuel A Roldan, Jiali Zhao, Jia‐Ou Wang, Shuang Chen, Meng He, Chen Ge, Can Wang, Hui‐Bin Lu, Haizhong Guo, Lin Gu, Xin Tong, Tao Zhu, Shanmin Wang, Hongxin Yang, Kui‐juan Jin, Er‐Jia Guo
Advanced Materials 33 (2), 2005920 (2021)
Weinan Lin, Baishun Yang, Andy Paul Chen, Xiaohan Wu, Rui Guo, Shaohai Chen, Liang Liu, Qidong Xie, Xinyu Shu, Yajuan Hui, Gan Moog Chow, Yuanping Feng, Giovanni Carlotti, Silvia Tacchi, Hongxin Yang, Jingsheng Chen
Phys. Rev. Lett. 124, 217202 (2020)
Jinghua Liang, Weiwei Wang, Haifeng Du, Ali Hallal, Karin Garcia, Mairbek Chshiev, Albert Fert, Hongxin Yang
Phys. Rev. B 101, 184401 (2020) (Editors' Suggestion)
11. Giant Enhancements of Perpendicular Magnetic Anisotropy and Spin‐Orbit Torque by a MoS2 Layer
Qidong Xie, Weinan Lin, Baishun Yang, Xinyu Shu, Shaohai Chen, Liang Liu, Xiaojiang Yu, Mark BH Breese, Tiejun Zhou, Ming Yang, Zheng Zhang, Shijie Wang, Hongxin Yang, Jianwei Chai, Xiufeng Han, Jingsheng Chen
Advanced Materials 31 (21), 1900776 (2019)
10. Significant Dzyaloshinskii-Moriya Interaction at Graphene-Ferromagnet Interfaces
Hongxin Yang, Gong Chen, Alexandre A.C. Cotta, Alpha T. N'Diaye, Kai Liu, Andreas Schmid, Albert Fert, Mairbek Chshiev
Nature Materials 17, 605 (2018)
9. Room-temperature chiral magnetic skyrmions in ultrathin magnetic nanostructures
O. Boulle, J. Vogel, Hongxin Yang, S. Pizzini, D. de Souza Chaves, A. Locatelli, T. O. Mentes, A. Sala, L. D. Buda-Prejbeanu, O. Klein, M. Belmeguenai, Y. Roussigné, A. Stashkevich, S. M. Chérif, L. Aballe, M. Foerster, M. Chshiev, S. Auffret, I. M. Miron, G. Gaudin
Nature Nanotechnology 11, 449 (2016)
8. Ferroelectric control of organic/ferromagnetic spinterface
S. H. Liang,Hongxin Yang, H. W. Yang, B. S. Tao, A. Djeffal, M. Chshiev, W. C. Huang, X. G. Li, A. Ferri, R. Desfeux, S. Mangin, D. Lacour, M. Hehn, O. Copie, K. Dumesnil, Y. Lu
Advanced Materials 28, 10204 (2016)
Hongxin Yang, D. Vu Anh, A. Hallal, N. Rougemaille, J. Coraux, G. Chen, A. K. Schmid, and M. Chshiev
Nano Letters 16, 145 (2016)
6. Anatomy of Dzyaloshinskii-Moriya Interaction at Co/Pt Interfaces
Hongxin Yang, A. Thiaville, S. Rohart, A. Fert, and M. Chshiev
Phys. Rev. Lett. 115, 267210 (2015)
B. S. Tao, Hongxin Yang, Y. L. Zuo, X. Devaux, G. Lengaigne, M. Hehn, D. Lacour, S. Andrieu, M. Chshiev, T. Hauet, S. Mangin, F. Montaigne, X. F. Han, Y. Lu
Phys. Rev. Lett. 115, 157204 (2015)
Hongxin Yang, A. Hallal, D. Terrade, X. Waintal, S. Roche and M. Chshiev
Phys. Rev. Lett. 110, 046603 (2013)
Y. Niimi, Y. Kawanishi, D. H. Wei, C. Derahlot, Hongxin Yang, M. Chshiev, T. Valet, A. Fert, and Y. Otani
Phys. Rev. Lett. 109, 156602 (2012)
HX Yang, M Chshiev, B Dieny, JH Lee, A Manchon, KH Shin
Physical Review B 84 (5), 054401 (2011) 引用800余次
1. Bond Counting Rule for Carbon and Its Application to the Roughness of Diamond (001)
Hongxin Yang, Lifang Xu, Zhong Fang, Changzhi Gu, and Shengbai Zhang
Phys. Rev. Lett. 100, 026101 (2008)