Dr. Peng Lin is currently a tenure-track professor in the College of Computer Science and Technology at Zhejiang University and a Principle Investigator at State Key Laboratory of Brain Machine Intelligence. He received his PhD in Electrical and Computer Engineering from University of Massachusetts Amherst in 2017 and was a Postdoc Associate at Massachusetts Institute of Technology (MIT) from 2017 to 2020. His current research focuses on neuromorphic computing devices and integrated systems. To date, Dr. Lin has published more than 40 papers in peer-reviewed journals and conferences such as Nature Electronics, Nature Nanotechnology, Nature Machine Intelligence etc.

Full list at Google Scholar

Selected Journal Publications

[19] P. Chen, F. Liu, P. Lin* (*Corresponding Author), P. Li, Y. Xiao, B. Zhang, G. Pan*, "Open loop analog programmable electrochemical memory array", Nature Communications, in press.

[18] C. Choi, H. Kim, J. Kang, H. Yeon, C. S. Chang, J. M. Suh, J. Shin, Y. Kim, H. E. Lee, D. Lee, M.-K. Song, J. Lee, I. Jang, S. Pang, K. Ryu, S.-H. Bae, Y. Nie, H. S. Kum, W. Wu*, P. Lin* (*Corresponding Author) and J. Kim*, “Reconfigurable heterogeneous integration enabled by stackable chips with embedded artificial intelligence”, Nature Electronics 5, 386-393 (2022), (Cover Article)

[17] H. Yeun†, P. Lin† (†Contribute equally), C. Choi†, S. Tan, Y. Park, D. Lee, S. Kim and J. Kim, "Alloying conducting channels for reliable analog computing", Nature Nanotechnology 15, 574-579 (2020).

[16] P. Lin, C. Li, Z. Wang, Y. Li, H. Jiang, W. Song, M. Rao, Y. Zhuo, N. Upadhyay, M. Barnell, Q. Wu, Q. Xia and J. J. Yang, “Three-dimensional memristor circuits as complex neural networks”,Nature Electronics 3, 225-232 (2020), (Cover Article)

[15] N. K. Upadhyay, W. Sun, P. Lin, S. Joshi, R. Midya, X. Zhang, Z. Wang, H. Jiang, J. H. Yoon, M. Rao, M. Chi, Q. Xia and J. J. Yang, “A Memristor with low switching current and voltage for 1S1R integration and array operation.” Advanced Electronic Materials, 1901411 (2020)

[14] J. H.Yoon, J. Zhang, P. Lin, N. Upadhyay, P. Yan, Y. Liu, Q. Xia and J. J. Yang, “A low-current and analog memristor with Ru as mobile species”, Advanced Materials, 1904599 (2020)

[13] Z. Wang†, C. Li†, P. Lin† (†Contribute equally), M. Rao, Y. Nie, W. Song, Q. Qiu, Y. Li, P. Yan, J.P. Strachan, N. Ge, N. McDonald, Q. Wu, M. Hu, H. Wu, R.S. Williams, Q. Xia and J.J. Yang. "In situ training of feed-forward and recurrent convolutional memristor networks", Nature Machine Intelligence 1, 434-442 (2019).

[12] H. Jiang, C. Li, P. Lin, S. Pi, J. J. Yang and Q. Xia, “Scalable 3D Ta:SiOx Memristive Devices”, Advanced Electronic Materials, 1800958 (2019)

[11] S. Tan, P. Lin, H. Yeun, S. Choi, Y. Park and J. Kim, “Perspective on Uniform Switching of Artificial Synapses for Large-scale Neuromorphic Arrays”, APL Materials 6, 120901 (2018)

[10] P. Lin and Q. Xia, “Tutorial: Fabrication and three-dimensional integration of nanoscale memristive devices and arrays”, Journal of Applied Physics 124, 152001 (2018)

[9] S. Pi, P. Lin and Q. Xia, “Fabrication of sub-10 nm metal nanowire arrays with sub-1 nm critical dimension control”, Nanotechnology 27, 46 (2016)

[8] H. Jiang, L. Han, P. Lin, Z. Wang, M. H. Jang, Q. Wu, M. Barnell, J. J. Yang, H. Xin and Q. Xia,“Sub-10 nm Ta channel responsible for superior performance of a HfO2 memristor”, Scientific reports 6, 28525 (2016)

[7] Z. Wang, H. Jiang, P. Lin, A. Ribbe, Q. Wu, Q. Xia and J. J. Yang, “Electrochemical metallization switching with a platinum group metal in different oxides”, Nanoscale 8, 14023-14030 (2016)

[6] P. Lin, S. Pi and Q. Xia, “3D integration of planar crossbar memristive devices with CMOS substrate”, Nanotechnology 25, 405202 (2014)

[5] S. Pi., P. Lin, H. Jiang, C. Li, & Q. Xia, “Device engineering and CMOS integration of nanoscale memristors”, Circuits and Systems (ISCAS), 2014 IEEE International Symposium on, 425-427 (2014)

[4] J. Mu, P. Lin and Q. Xia, “Concentric rings of polystyrene and titanium dioxide nanoparticles patterned by alternating current signal guided coffee ring effect”, Appl. Phys. Lett. 104, 261601 (2014)

[3] S. Pi, P. Lin and Q. Xia, “Cross point arrays of 8 nm × 8 nm memristive devices fabricated with nanoimprint lithography”, J. Vac. Sci. Technol. B 31, 06FA02 (2013)

[2] P. Lin, S. Pi, H. Jiang and Q. Xia, “Mold cleaning with polydimethylsiloxane for nanoimprint lithography”, Nanotechnology 24, 325301 (2013)

[1] S. Pi, P. Lin and Q. Xia, “Memristor crossbar arrays with junction areas towards sub-10 × 10 nm2”,Cellular Nanoscale Networks and Their Applications (CNNA), 2012 13th International Workshop on(2012)

Selected Invited Talks

[8] "Electrochemical Memristive device towards accurate training", The 5th International Conference on Memristive Materials, Devices & Systems (Memrisys 2022), Cambridge, MA, USA, Nov 30 - Dec. 2, 2022.

[7] "Hybrid memristor/CMOS neuromorphic circuits", CSTIC 2022, Hangzhou, China, June 14- July 12, 2022.

[6] "Development of 2D and 3D passive memristor arrays", IUMRS-ICA 2021, Jeju, Korea, Oct 3-8, 2021.

[5] "Three-dimensional neuromorphic computing arrays", 2nd International Conference on Future Technology and Disruptive Innovation, Hangzhou, Oct.26, 2020

[4] "Neuromorphic Computing with Resistive Switching Devices (ReRAM)", The Physics of AI, New York State Section of the American Physical Society and the 120th Topical Symposium, IBM T.J. Watson Research Center, April. 26th, 2019

[3] "Neuromorphic computing based on memristive arrays", Sept. 21st, 2018, University of Virginia, Charlottesville, VA.

[2] "Three-Dimensional Memristor Integrated Circuits and Applications", Sept. 15th, 2017, Massachusetts Institute of Technology (MIT), Cambridge, MA.

[1] "3D Memristor Circuit for Neuromorphic Computing", Jun. 1st, 2017, EIPBN’ 17, Orlando, FL.