Biography

Dr. Fei Xue is now a tenure-track assitant professor  in center for quantum and school of physics, Zhejiang University, China. He received BS from China University of Geoscience (Beijing) in 2011, and PhD from University of China Academy of Sciences in 2017. Afterwards, from 2017 to 2021 he worked as a postdoctoral fellow at the King Abdullah University of Science and Technology.

His research focuses on low-dimensional ferroelectric materials, ferroelectric memristors, and neuromorphic computing. He has published over 30 peer-reviewed papers in prestigious journals such as Nature Electronics, among which the correspondence authorship papers include Science Advances (×2), Nature Communications (×3), Matter (×2) etc. He was filed or granted with 10 Chinese patents. He is an associate editor of Microelectronic Engineering (Elsevier) and was awarded with IAAM Young Scientist and RSC Excellent Supervisor.

Representive papers

• Opto-reconfigurable wafer-scale h-BN/Si mixed-dimensional memristors with an ultrawide bandwidth

  Maolin Chen, Yinchang Ma, Nabeel Aslam, Chen Liu, Linqu Luo, Xiaowen Zhang, Kairan Mai, Kaichen Zhu, Xiangming Xu, Dongxing Zheng, Hanwen Wang, Bo Tian, Junzhu Li, Xin He, Han Xiao, Yiqiang Chen, Husam N. Alshareef, Kai Chang, Mario Lanza, Thomas D. Anthopoulos, Zheng Han, Fei Xue*, and Xixiang Zhang*

  Nature Nanotechnology 2025 in revision.

•  Low-force pulse switching of ferroelectric polarization enabled by imprint field

  Yuchao Zhang, Shanzheng Du, Xiaochi Liu, Yahua Yuan, Yumei Jing, Tian Tian*, Junhao Chu, Fei Xue*, Kai Chang, and Jian Sun*

  Nature Communications 2025 in revision.

• Ultralow-pressure mechanical-motion switching of ferroelectric polarization

  Baoyu Wang+, Xin He+, Jianjun Luo, Yitong Chen, Zhixiang Zhang, Ding Wang, Shangui Lan, Peijian Wang, Xun Han, Yuda Zhao, Zheng Li, Huan Hu, Yang Xu, Zheng-Dong Luo, Weijin Hu, Bowen Zhu, Jian Sun*, Yan Liu, Genquan Han, Xixiang Zhang, Bin Yu*, Kai Chang and Fei Xue*

  Science Advances 2025 in press.

• Observation of switchable polar skyrmion bubbles down to the atomic layers in van der Waals ferroelectric CuInP₂S₆

  Fei Xue*, Chenhui Zhang*, Sizheng Zheng, Peiran Tong, Baoyu Wang, Yong Peng, Zhongyi Wang, Haoran Xu, Youshui He, Hongzhi Zhou, Nan Wang, Peng Han, Youyou Yuan, Yinchang Ma, Chu Huan, Senfu Zhang, Hongliang Chen, Haiming Zhu, Yang Xu, Bin Yu, Jian Sun, Hua Wang, Peng Chen, Xingsen Gao, Kai Chang,  He Tian*, Jie Wang*, and Xixiang Zhang*

  Nature Communications 2025, 16, 2349.

• Intercalation of functional materials with phase transitions for neuromorphic applications

  Xin He, Hua Wang, Jian Sun, Xixiang Zhang, Kai Chang, and Fei Xue*

  Matter 2025, 8, 101893. (Invited Review)

•  Quasi-zero-dimensional ferroelectric polarization charges-coupled resistance switching with high-current density in ultrascaled semiconductors

  Qi Sun+, Xuefan Zhou+, Xiaochi Liu, Yahua Yuan, Linfeng Sun, Ding Wang, Fei Xue*, Hang Luo*, Dou Zhang, and Jian Sun*

  Nano Letters 2024, 24, 975.

• Proton-mediated reversible switching of multiple metastable ferroelectric phases with low operation voltages

  Xin He, Yinchang Ma, Chenhui Zhang, Aiping Fu, Weijin Hu, Yang Xu, Bin Yu, Kai Liu, Hua Wang*, Xixiang Zhang*, and Fei Xue*

  Science Advances 2023, 9, eadg4561.

• High-performance van der Waals antiferroelectric CuCrP₂S₆-based memristors

  Yinchang Ma+, Yuan Yan+, Linqu Luo+, Sebastian Pazos, Chenhui Zhang, Xiang Lv, Maolin Chen, Chen Liu, Yizhou Wang, Aitian Chen, Yan Li, Dongxing Zheng, Rongyu Lin, Hanin Algaidi, Minglei Sun, Zhe Liu, Shaobo Tu, Husam N. Alshareef, Cheng Gong, Mario  Lanza, Fei Xue*, and Xixiang Zhang*

  Nature Communications 2023, 14, 7891.

• Two-dimensional ferroelectricity and antiferroelectricity for new computing paradigms

  Fei Xue+*,Yinchang Ma+, Hua Wang+, Linqu Luo, Yang Xu, Thomas D Anthopoulos, Mario Lanza, Bin Yu* and Xixiang Zhang*

  Matter 2022, 34, 2201880 (Invited Review).

• Integrated memory devices based on 2D materials

  Fei Xue+*, Chenhui Zhang+, Yinchang Ma, Yan Wen, Xin He, Bin Yu, and Xixiang Zhang*

  Advanced Materials 2022, 34, 2201880 (Invited Review).

• Unraveling the origin of ferroelectric resistance switching through the interfacial engineering of layered ferroelectric-metal junctions

  Fei Xue+*, Xin He+, Yinchang Ma+, Dongxing Zheng, Chenhui Zhang, Lain-Jong Li, Jr-Hau He, Bin Yu, and Xixiang Zhang*

  Nature Communications 2021, 12, 7291.

• Giant ferroelectric resistance switching controlled by a modulatory terminal for low power neuromorphic in-memory computing

  Fei Xue+, Xin He+, Zhenyu Wang, Jose Ramon Duran Retamal, Zheng Chai, Lingling Jing, Chenhui Zhang, Hui Fang, Yang Chai, Tao Jiang, Weidong Zhang, Husam N Alshareef, Zhigang Ji, Lain-Jong Li*, Jr-Hau He*, Xixiang Zhang*

  Advanced Materials 2021, 33, 2008709.

• Gate-tunable and multidirection-switchable memristive phenomena in a van der Waals ferroelectric

  Fei Xue+, Xin He+, José Ramón Durán Retamal, Ali Han, Junwei Zhang, Zhixiong Liu, Jing-Kai Huang, Weijin Hu, Vincent Tung, Jr-Hau He*, Lain-Jong Li* and Xixiang Zhang*,

  Advanced Materials 2019, 31, 1901300.

• P-type MoS₂ and n-type ZnO diode and its performance enhancement by piezo-phototronic effect

  Fei Xue, Libo Chen, Jian Chen, Jingbin Liu, Longfei Wang, Mengxiao Chen, Yaokun Pang, Xiaonian Yang, Guoyun Gao, Junyi Zhai*, Zhong Lin Wang*

  Advanced Materials 2016, 28, 3391.

For more details, please refer to my Google Schoolar ‪Fei Xue‬ - ‪Google 学术搜索‬